GROWTH AND DOPING OF GALLIUM-ARSENIDE USING MOLECULAR-BEAM EPITAXY (MBE) - THERMODYNAMIC AND KINETIC ASPECTS

被引：47
作者：
HECKINGBOTTOM, R
DAVIES, GJ
PRIOR, KA
机构：
来源：
SURFACE SCIENCE | 1983年 / 132卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(83)90548-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：375 / 389
页数：15
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