POLYMER FILM FORMATION IN C2F6-H2 DISCHARGES

被引:73
作者
DAGOSTINO, R
CRAMAROSSA, F
FRACASSI, F
DESIMONI, E
SABBATINI, L
ZAMBONIN, PG
CAPORICCIO, G
机构
[1] UNIV BARI,DEPARTIMENTO CHIM,CHIM ANALIT LAB,I-70126 BARI,ITALY
[2] CTR R&S MONTEFLUOS,I-20183 MILAN,ITALY
关键词
D O I
10.1016/0040-6090(86)90384-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:163 / 175
页数:13
相关论文
共 27 条
[1]  
Adamson A. W., 1982, PHYSICAL CHEM SURFAC
[2]  
AREFI F, 1983, 6TH P INT S PLASM CH, P565
[3]   METAL DOPED FLUOROCARBON POLYMER-FILMS PREPARED BY PLASMA POLYMERIZATION USING AN RF PLANAR MAGNETRON TARGET [J].
BIEDERMAN, H ;
HOLLAND, L .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 212 (1-3) :497-503
[4]   EFFECT OF ARGON ADDITION TO SICL4-H2 MIXTURES ON THE OPTICAL-PROPERTIES OF GLOW-DISCHARGE SILICON FILMS [J].
BRUNO, G ;
CAPEZZUTO, P ;
CRAMAROSSA, F .
THIN SOLID FILMS, 1985, 129 (3-4) :217-226
[5]  
CLARK DT, 1978, HDB XRAY ULTRAVIOLET, pCH6
[6]  
d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P21, DOI 10.1007/BF00567369
[7]  
d'Agostino R., 1983, XVI International Conference on Phenomena in Ionized Gases (Invited Papers), P251
[8]  
d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P1, DOI 10.1007/BF00567367
[9]   MECHANISMS OF ETCHING AND POLYMERIZATION IN RADIOFREQUENCY DISCHARGES OF CF4-H2,CF4-C2F4,C2F6-H2,C3F8-H2 [J].
DAGOSTINO, R ;
CRAMAROSSA, F ;
COLAPRICO, V ;
DETTOLE, R .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1284-1288
[10]  
dAgostino R., 1982, PLASMA CHEM PLASMA P, V2, P213