THE EFFECT OF CU IMPURITIES ON INFRARED ELECTROLUMINESCENCE IN GAAS P-N JUNCTIONS

被引：19

作者：

LARSEN, TL

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 07期

关键词：

D O I：

10.1063/1.1753892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：113 / 115

页数：3

共 12 条

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MACDONALD, HE ;

BUBE, RH .

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[3]

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EDMOND, JT .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1428-1430

[5] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE [J].

FULLER, CS ;

WHELAND, JM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) :173-&

[6]

HALL RN, 1962, B AM PHYS SOC, V7, P234

[7]

HALL RN, 1962, 8A SCI REP

[8]

KEYES RJ, 1962, P IRE, V50, P1822

[9]

PANKOVE JI, 1962, B AM PHYS SOC, V7, P88

[10] PROPERTIES OF P-TYPE GAAS PREPARED BY COPPER DIFFUSION [J].

ROSI, FD ;

MEYERHOFER, D ;

JENSEN, RV .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) :1105-1108

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