CDTE HOLE LIFETIME FROM THE PHOTOVOLTAIC EFFECT

被引：16
作者：
CUSANO, DA
LORENZ, MR
机构：
来源：
SOLID STATE COMMUNICATIONS | 1964年 / 2卷 / 04期
关键词：
D O I：
10.1016/0038-1098(64)90252-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：125 / 128
页数：4
相关论文
共 16 条
[1]   CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J].
AVEN, M ;
SEGALL, B .
PHYSICAL REVIEW, 1963, 130 (01) :81-+
[2]   CDTE SOLAR CELLS AND PHOTOVOLTAIC HETEROJUNCTIONS IN II-VI COMPOUNDS [J].
CUSANO, DA .
SOLID-STATE ELECTRONICS, 1963, 6 (03) :217-232
[3]  
CUSANO DA, UNPUB
[4]  
de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361
[5]  
HILSUM C, 1960, P INT C SEMICONDUCTO, P962
[6]   SHALLOW AND DEEP ACCEPTOR STATES IN CDTE [J].
LORENZ, MR ;
SEGALL, B .
PHYSICS LETTERS, 1963, 7 (01) :18-20
[7]   HIGH-PURITY CDTE BY SEALED-INGOT ZONE REFINING [J].
LORENZ, MR ;
HALSTED, RE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) :343-344
[8]   DIELECTRIC CONSTANT BEHAVIOR NEAR BAND EDGES IN CDTE AND GE [J].
MARPLE, DTF ;
EHRENREICH, H .
PHYSICAL REVIEW LETTERS, 1962, 8 (03) :87-&
[9]   HOLE DRIFT MOBILITY AND LIFETIME IN CDS CRYSTALS [J].
MORT, J ;
SPEAR, WE .
PHYSICAL REVIEW LETTERS, 1962, 8 (08) :314-&
[10]   THE POTENTIALITIES OF SILICON AND GALLIUM ARSENIDE SOLAR BATTERIES [J].
MOSS, TS .
SOLID-STATE ELECTRONICS, 1961, 2 (04) :222-231
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