ON THE FREQUENCY-DEPENDENCE OF SI2F6 ISOTOPE-SELECTIVE MULTIPHOTON DISSOCIATION

被引：4
|
作者：
OKAMURA, H
TOSA, V
TAKEUCHI, K
机构：
[1] The Institute of Physical and Chemical Research (RIKEN), Wako-shi, Saitama, 351-01
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 11A期
关键词：
IR MULTIPHOTON EXCITATION; IR MULTIPHOTON DISSOCIATION; SILICON ISOTOPES; LASER ISOTOPE SEPARATION; HEXAFLUORODISILANE;
D O I：
10.1143/JJAP.34.L1497
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The laser frequency dependence of the enrichment factors in the separation of silicon isotopes by infrared multiphoton dissociation (MPD) were calculated. Based on the knowledge of the isotopic shifts, a simple model was developed to estimate the dependence of the MPD yield on the laser frequency. The results agree well with the experimental results reported elsewhere. This new method allows vs to determine the relative contribution to the MPD yield of the 6 Si2F6 isotopic species and to explain the behavior of the enrichment factors.
引用
收藏
页码：L1497 / L1499
页数：3
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