COMPARATIVE CONSIDERATION OF PHOTOREFLECTANCE AND ELECTROREFLECTANCE SPECTRA OF SEMICONDUCTORS .2. NUMERICAL-CALCULATIONS FOR N-TYPE GAAS

被引：5

作者：

BOUAMAMA, K ^{[1
]}

NEUMANN, H ^{[1
]}

机构：

[1] KARL MARX UNIV LEIPZIG,FACHBEREICH PHYS,LINNESTR 5,O-7010 LEIPZIG,GERMANY

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1992年 / 27卷 / 04期

关键词：

D O I：

10.1002/crat.2170270414

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoreflectance and electroreflectance spectra of n-type GaAs are calculated as a function of the doping level, the field modulation and the broadening energy. As a general result it is found that, except in the limiting case of very low modulation fields, the electroreflectance and photoreflectance signals are not proportional to each other. The influence of the various parameters on the spectra is discussed.

引用

页码：491 / 502

页数：12

共 22 条

[1] MODEL DIELECTRIC-CONSTANTS OF GAP, GAAS, GASB, INP, INAS, AND INSB [J].

ADACHI, S .

PHYSICAL REVIEW B, 1987, 35 (14) :7454-7463

[2] EXCITONIC EFFECTS IN THE OPTICAL-SPECTRUM OF GAAS [J].

ADACHI, S .

PHYSICAL REVIEW B, 1990, 41 (02) :1003-1013

[3] OPTICAL DISPERSION-RELATIONS FOR GAP, GAAS, GASB, INP, INAS, INSB, ALXGA1-XAS, AND IN1-XGAXASYP1-Y [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) :6030-6040

[4]

[Anonymous], 1970, HDB MATH FNCTIONS

[5]

Aspnes D., 1972, SEMICONDUCT SEMIMET, V9, P457

[6] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].

ASPNES, DE .

SURFACE SCIENCE, 1973, 37 (01) :418-442

[7] BAND NONPARABOLICITIES, BROADENING, AND INTERNAL FIELD DISTRIBUTIONS - SPECTROSCOPY OF FRANZ-KELDYSH OSCILLATIONS [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1974, 10 (10) :4228-4238

[8] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[9]

CARDONA M, 1969, SOLID STATE PHYSIC S, V11, P1

[10] DEFECT-STATE OCCUPATION, FERMI-LEVEL PINNING, AND ILLUMINATION EFFECTS ON FREE SEMICONDUCTOR SURFACES [J].

DARLING, RB .

PHYSICAL REVIEW B, 1991, 43 (05) :4071-4083

← 1 2 3 →