IMPLANTATION EFFECT ON TRANSPORT-PROPERTIES OF MOBILE IONS IN SILICON DIOXIDE

被引：3
|
作者：
BEUTHNER, P
DZIESIATY, J
PIPREK, P
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 91卷 / 02期
关键词：
D O I：
10.1002/pssa.2210910252
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K113 / K117
页数：5
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