INFRARED-ABSORPTION AND PHOTOLUMINESCENCE OF DEFECT LEVELS IN THE 204-MEV TO 255-MEV RANGE IN P-TYPE GAAS

被引：24

作者：

FISCHER, DW ^{[1
]}

YU, PW ^{[1
]}

机构：

[1] WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45433

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.336424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1952 / 1955

页数：4

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