The capacitive probe method for noncontact characterization and monitoring of dielectric materials is analyzed theoretically. An analytical method based upon the Hilbert transform technique and a numerical method using the finite element technique for calculating the potential distribution and change in admittance of the probe caused by presence of the dielectric material as a function of liftoff (distance between the probe plane and the surface of the dielectric material) are described. The two methods are compared with each other and their relative advantages discussed. The possibility of extracting useful information about the dielectric constant of the material from experimental data is also discussed in the light of the proposed theory.
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页码:629 / 638
页数:10
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