SYNTHESIS OF B-DOPED DIAMOND FILM

被引：36

作者：

OKANO, K

AKIBA, Y

KUROSU, T

IIDA, M

NAKAMURA, T

机构：

[1] Department of Electronics, School of Engineering, Tokai University, Hiratsuka, Kanagawa, 259-12

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(08)80106-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Boron-doped diamond films have been synthesized by the thermal filament CVD method. As the doping source, boron trioxide powder was used instead of diborane. The films obtained were identified as diamond by several methods including Raman spectroscopy. The resistivity of the films was inversely proportional to the doping concentration over four order. p-Type electrical conduction was also confirmed by measuring the Seebeck effect. © 1990, Elsevier Science Publishers B.V.. All rights reserved.

引用

页码：1192 / 1195

页数：4

共 6 条

[1] CHARACTERIZATION OF CONDUCTING DIAMOND FILMS [J].

FUJIMORI, N ;

IMAI, T ;

DOI, A .

VACUUM, 1986, 36 (1-3) :99-102

[2] SYNTHESIS OF DIAMOND THIN-FILMS BY THERMAL CVD USING ORGANIC-COMPOUNDS [J].

HIROSE, Y ;

TERASAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (06) :L519-L521

[3] VAPOR-DEPOSITION OF DIAMOND PARTICLES FROM METHANE [J].

MATSUMOTO, S ;

SATO, Y ;

KAMO, M ;

SETAKA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (04) :L183-L185

[4] SYNTHESIS OF DIAMOND THIN-FILMS HAVING SEMICONDUCTIVE PROPERTIES [J].

OKANO, K ;

NARUKI, H ;

AKIBA, Y ;

KUROSU, T ;

IIDA, M ;

HIROSE, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02) :L173-L175

[5] CHARACTERIZATION OF BORON-DOPED DIAMOND FILM [J].

OKANO, K ;

NARUKI, H ;

AKIBA, Y ;

KUROSU, T ;

IIDA, M ;

HIROSE, Y ;

NAKAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (06) :1066-1071

[6]

SAWABE A, 1985, APPL PHYS LETT, V46, P46

← 1 →