DEPOSITION AND MICROHARDNESS OF SIC FROM THE SI2CL6-C3H8-H2-AR SYSTEM

We obtained SiC coating layers on a graphite substrate using hexachlorodisilane as a silicon source and propane as a carbon source. We examined the deposition conditions, contents of carbon, silicon and chlorine in the deposits, and the microhardness. Mirror-like amorphous silicon layers were deposited in the reaction temperature range 500 to 630 degree C. Well-formed silicon carbide layers with good adherency to the substrate were obtained above 850 degree C. The lowest deposition temperature of SiC was estimated to be 750 to 800 degree C. The Vickers microhardness of the SiC layer was about 3800 kg mm** minus **2 at room temperature and 2150 kg mm** minus **2 at 1000 degree C.