ELECTRICAL ENDPOINT DETECTION OF VLSI CONTACT PLASMA-ETCHING

被引:6
|
作者
CHANG, G
MCVITTIE, JP
WALKER, JT
DUTTON, RW
机构
关键词
D O I
10.1109/EDL.1984.26009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:514 / 517
页数:4
相关论文
共 50 条
  • [31] PLASMA-ETCHING OF TITANIUM DISILICIDE
    TOMKINS, G
    DAVIS, MH
    ROSSER, PJ
    VACUUM, 1984, 34 (3-4) : 451 - 454
  • [32] REACTIVE ION ETCHING AND PLASMA-ETCHING OF TUNGSTEN
    VERDONCK, P
    BRASSEUR, G
    SWART, J
    MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) : 329 - 332
  • [33] BASIC MECHANISMS IN PLASMA-ETCHING
    DEUTSCH, H
    KERSTEN, H
    RUTSCHER, A
    CONTRIBUTIONS TO PLASMA PHYSICS, 1989, 29 (03) : 263 - 284
  • [34] THE BEHAVIOR OF THE ETCHING RATE IN A MODEL OF PLASMA-ETCHING
    KERN, M
    KOKSCH, N
    ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND MECHANIK, 1994, 74 (11): : 513 - 520
  • [35] THE PLASMA-ETCHING OF ELECTRONIC MATERIALS
    MANTEI, TD
    JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1994, 46 (03): : 36 - 39
  • [36] HYDROGEN PLASMA-ETCHING OF ORGANICS
    ROBB, FY
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) : 1670 - 1674
  • [37] MODELING OF PLASMA-ETCHING IN MICROELECTRONICS
    DERKACH, VP
    BAGRII, IP
    CHECHKO, GA
    CYBERNETICS, 1990, 26 (05): : 653 - 663
  • [38] HYDROGEN PLASMA-ETCHING OF CDTE
    SVOB, L
    CHEVALLIER, J
    OSSART, P
    MIRCEA, A
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1986, 5 (12) : 1319 - 1320
  • [39] PLASMA-ETCHING IN A MULTIPOLAR DISCHARGE
    WICKER, TE
    MANTEI, TD
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) : 1638 - 1647
  • [40] DOWNSTREAM PLASMA-ETCHING AND STRIPPING
    COOK, JM
    SOLID STATE TECHNOLOGY, 1987, 30 (04) : 147 - 151