FABRICATION AND RESIST EXPOSURE CHARACTERISTICS OF 50 KEV NANOMETER E-BEAM LITHOGRAPHY SYSTEM

被引:18
作者
GAMO, K [1 ]
YAMASHITA, K [1 ]
EMOTO, F [1 ]
NAMBA, S [1 ]
SAMOTO, N [1 ]
SHIMIZU, R [1 ]
机构
[1] OSAKA UNIV,FAC ENGN,SUITA,OSAKA 565,JAPAN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期
关键词
D O I
10.1116/1.583191
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
10
引用
收藏
页码:117 / 120
页数:4
相关论文
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