THE CATHODOLUMINESCENCE CONTRAST FORMATION OF LOCALIZED NON-RADIATIVE DEFECTS IN SEMICONDUCTORS

被引：21

作者：

LOHNERT, K ^{[1
]}

KUBALEK, E ^{[1
]}

机构：

[1] UNIV DUISBURG,FACHGEBIET WERKSTOFFE ELEKTROTECH,DUISBURG,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 83卷 / 01期

关键词：

D O I：

10.1002/pssa.2210830134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：307 / 314

页数：8

共 11 条

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DONOLATO, C
VENTURI, P
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02): : 377 - 387
[6] DONOLATO C, 1978, OPTIK, V52, P19
[7] LOHNERT K, 1983, I PHYS C SER, V67, P303
[8] A CONTRIBUTION TO THE THEORY OF THE EBIC CONTRAST OF LATTICE-DEFECTS IN SEMICONDUCTORS
PASEMANN, L
[J]. ULTRAMICROSCOPY, 1981, 6 (03) : 237 - 250
[9] van Opdorp C., 1977, I PHYS C SER, V33b, P317
[10] USE OF SCHOTTKY-DIODE COLLECTORS FOR SEM DETERMINATION OF BULK DIFFUSION LENGTHS
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PETERS, RC
KLERK, M
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (03) : 125 - 126