ION-BEAM ETCHING OF SILICON DIOXIDE ON SILICON

被引：13
|
作者：
MADER, L [1 ]
HOEPFNER, J [1 ]
机构：
[1] SIEMENS AG,RES LABS,D-8000 MUNCHEN 70,FED REP GER
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 12期
关键词：
D O I：
10.1149/1.2132719
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1893 / 1898
页数：6
相关论文
共 50 条
  • [1] ION-BEAM ETCHING OF SILICON DIOXIDE LAYERS FOR MOS DEVICES
    MADER, L
    WIDMANN, D
    HOPFNER, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : C86 - C86
  • [2] CHEMICALLY ASSISTED ION-BEAM ETCHING OF SILICON AND SILICON DIOXIDE USING SF6
    RAY, SK
    MAITI, CK
    LAHIRI, SK
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 1995, 15 (04) : 711 - 720
  • [3] REACTIVE ION-BEAM ETCHING OF SILICON-CARBIDE
    MATSUI, S
    MIZUKI, S
    YAMATO, T
    ARITOME, H
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : L38 - L40
  • [4] EFFECT OF NEUTRAL ION-BEAM SPUTTERING AND ETCHING ON SILICON
    FONASH, SJ
    ASHOK, S
    SINGH, R
    THIN SOLID FILMS, 1982, 90 (03) : 231 - 235
  • [5] ION-BEAM MIXING OF CHROMIUM ON SILICON DIOXIDE FILMS
    FREIRE, FL
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 83 (03): : 361 - 365
  • [6] Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering
    Telesh, E. V.
    Dostanko, A. P.
    Gurevich, O. V.
    JOURNAL OF APPLIED SPECTROSCOPY, 2018, 85 (01) : 67 - 72
  • [7] Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering
    E. V. Telesh
    A. P. Dostanko
    O. V. Gurevich
    Journal of Applied Spectroscopy, 2018, 85 : 67 - 72
  • [8] PATTERNING OF FINE-STRUCTURES IN SILICON DIOXIDE LAYERS BY ION-BEAM EXPOSURE AND WET CHEMICAL ETCHING
    CLEAVER, JRA
    HEARD, PJ
    EVASON, AF
    AHMED, H
    APPLIED PHYSICS LETTERS, 1986, 49 (11) : 654 - 656
  • [9] SPATIAL LOCALIZATION OF THE BURIED ION-BEAM SYNTHESIZED LAYER OF SILICON DIOXIDE INCLUSIONS IN SILICON
    DANILIN, AB
    MALININ, AA
    MORDKOVICH, VN
    SARAIKIN, VV
    VYLETALINA, OI
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 82 (03): : 431 - 434
  • [10] ION-BEAM ANNEALING OF SILICON
    HODGSON, RT
    BAGLIN, JEE
    PAL, R
    NERI, JM
    HAMMER, DA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C110 - C110
12345