ANALYSIS OF SHORT CHANNEL EFFECTS IN NANOSCALE MOSFETS

A quantum-mechanical model, by combining the quantum mechanical carrier distribution and short channel effects (SCEs) with the classical carrier transport is used to predict the I - V characteristics at sub-90 nm technology nodes. I - V characteristics of 90, 65, and 45 nm for developed model are benchmarked. The analysis of SCEs, namely, velocity saturation, mobility degradation, and threshold voltage shift, has been carried out in this paper for these technology nodes. The detailed physical view of the variation of these effects with channel length (L) and drain voltage (V-ds) has been presented. Also, the impact of including these effects in I - V equations of nanoscale MOSFETs is included in the paper. The observations presented in this paper will help in developing a clear understanding of physical behavior of nanoscale MOSFETs.