CHARACTERIZATION OF ION-IMPLANTATION THROUGH THIN TI METAL LAYERS ON SI

被引：4
作者：
FATHY, D [1 ]
HOLLAND, OW [1 ]
APPLETON, BR [1 ]
STEPHENSON, TS [1 ]
机构：
[1] MICROELECTR CTR N CAROLINA,POB 12889,RES TRIANGLE PK,NC 27709
来源：
MATERIALS LETTERS | 1987年 / 5卷 / 09期
关键词：
ION BEAMS - Applications - SEMICONDUCTOR DEVICES - Junctions - SILICON AND ALLOYS - Heat Treatment - TITANIUM AND ALLOYS - Thin Films;
D O I：
10.1016/0167-577X(87)90119-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ion beam mixing of thin Ti films deposited on Si is investigated and its effect during subsequent thermal sintering determined. Both inert (Xe** plus ) and dopant (As** plus ) ions are used to intermix the metal films and Si substrate. The morphology of the silicide layer formed by this process and the structure of the silicide/Si interface is shown to be independent of the specific ions used for mixing. The structural differences observed are correlated to the electrical resistivity of the films. Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) including ion channeling are used to characterize the films.
引用
收藏
页码：315 / 321
页数：7
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