BORON-DIFFUSION DURING ELECTRON PULSE ANNEALING OF SILICON

[1] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039

[2] BARBIER D, 1981, J MICROSC SPECT ELEC, V6, P513

[3] ANNEALING OF N-TYPE GERMANIUM IRRADIATED WITH 500 KEV ELECTRONS AT 6 K [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2): : 23 - 27

[4] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 604 - 606

[5] DEPTH OF DEFECT ANNIHILATION IN SILICON BY PULSE LASER ANNEALING - EXPERIMENT AND THEORY [J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 608 - 611

[6] KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[7] KAMARINOS G, COMMUNICATION

[8] Kodera H., 1963, JAP J APPL PHYS, V2, P212, DOI [10.1143/JJAP.2.212, DOI 10.1143/JJAP.2.212]

[9] MICHEL M, 1981, 15TH IEEE PHOT SPEC, P1007

[10] MELTING PHENOMENA AND PULSED-LASER ANNEALING IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7121 - 7128

[1] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2036 - 2039

[2] BARBIER D, 1981, J MICROSC SPECT ELEC, V6, P513

[3] ANNEALING OF N-TYPE GERMANIUM IRRADIATED WITH 500 KEV ELECTRONS AT 6 K [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2): : 23 - 27

[4] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (08) : 604 - 606

[5] DEPTH OF DEFECT ANNIHILATION IN SILICON BY PULSE LASER ANNEALING - EXPERIMENT AND THEORY [J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 608 - 611

[6] KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[7] KAMARINOS G, COMMUNICATION

[8] Kodera H., 1963, JAP J APPL PHYS, V2, P212, DOI [10.1143/JJAP.2.212, DOI 10.1143/JJAP.2.212]

[9] MICHEL M, 1981, 15TH IEEE PHOT SPEC, P1007

[10] MELTING PHENOMENA AND PULSED-LASER ANNEALING IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7121 - 7128