Reflectance anisotropy and Raman scattering spectroscopy studies of ZnSe grown on GaAs(001)

被引：5

作者：

Spaltmann, D

Morris, SJ

Matthai, CC

Williams, RH

机构：

[1] Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff, CF2 3YB

[2] PUkington Space Technology, Kinmel Park Industrial Estate, Bodelwyddan, Ciwyd

[3] Principal University College of Swansea, Swansea, SA2 SPP, Singleton Park

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1995年 / 28卷 / 12期

关键词：

D O I：

10.1088/0022-3727/28/12/027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using an evaporation chamber equipped with a ZnSe compound source, we have grown ZnSe on GaAs(001) and characterized the surface using low-energy electron diffraction (LEED), Raman scattering spectroscopy and reflectance anisotropy spectroscopy (RAS). High-quality layers of ZnSe were obtained and revealed by LEED to have a c(2 x 2) surface reconstruction and the RAS spectra were measured. The RAS spectra proved to be reproducible when a similar surface was obtained by de-capping a Se-capped ZnSe(001) sample.

引用

页码：2574 / 2577

页数：4

共 12 条

[1] OPTICAL ANISOTROPY SPECTRA OF GAAS(001) SURFACES [J].

CHANG, YC ;

REN, SF ;

ASPNES, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1856-1862

[2] 1ST-PRINCIPLES STUDY OF ZN-STABILIZED AND SE-STABILIZED ZNSE(100) SURFACE RECONSTRUCTIONS [J].

GARCIA, A ;

NORTHRUP, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2678-2683

[3]

GRANGE JA, 1994, P ICFSI 4, P692

[4] REFLECTANCE-DIFFERENCE SPECTROSCOPY OF (001) GAAS-SURFACES IN ULTRAHIGH-VACUUM [J].

KAMIYA, I ;

ASPNES, DE ;

FLOREZ, LT ;

HARBISON, JP .

PHYSICAL REVIEW B, 1992, 46 (24) :15894-15904

[5] CHEMICAL-REACTION AT THE ZNSE/GAAS INTERFACE DETECTED BY RAMAN-SPECTROSCOPY [J].

KROST, A ;

RICHTER, W ;

ZAHN, DRT ;

HINGERL, K ;

SITTER, H .

APPLIED PHYSICS LETTERS, 1990, 57 (19) :1981-1982

[6] REFLECTANCE ANISOTROPY OF RECONSTRUCTED GAAS(001) SURFACES [J].

MORRIS, SJ ;

BASS, JM ;

MATTHAI, CC ;

MILMAN, V ;

PAYNE, MC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (04) :2684-2688

[7]

MORRIS SJ, 1995, UNPUB J APPL PHYS

[8] 1ST-PRINCIPLES STUDY OF THE ATOMIC RECONSTRUCTIONS OF ZNSE(100) SURFACES [J].

PARK, CH ;

CHADI, DJ .

PHYSICAL REVIEW B, 1994, 49 (23) :16467-16473

[9] GAAS SURFACE CONTROL DURING METALORGANIC VAPOR-PHASE EPITAXY BY REFLECTANCE ANISOTROPY SPECTROSCOPY [J].

REINHARDT, F ;

RICHTER, W ;

MULLER, AB ;

GUTSCHE, D ;

KURPAS, P ;

PLOSKA, K ;

ROSE, KC ;

ZORN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04) :1427-1430

[10] ANALYSIS OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF INAS ON GAAS(100) BY REFLECTION ANISOTROPY SPECTROSCOPY [J].

SCHOLZ, SM ;

MULLER, AB ;

RICHTER, W ;

ZAHN, DRT ;

WESTWOOD, DI ;

WOOLF, DA ;

WILLIAMS, RH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1710-1715

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