ELECTRIC-FIELD DOMAINS IN SEMICONDUCTOR SUPERLATTICES - RESONANT AND NONRESONANT TUNNELING

被引：36
|
作者：
KWOK, SH
MERLIN, R
GRAHN, HT
PLOOG, K
机构：
[1] Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor
[2] Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.50.2007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence experiments detecting the occupation of higher subbands in GaAs-AlxGa1-xAs superlattices are used to determine the field strengths of electric-field domains. While the magnitude of the electric field in the low-field domain corresponds to resonant alignment of subbands in adjacent wells, the field strength in the high-field domain is below the value corresponding to the resonant field. These results are interpreted in terms of a simple model based on current conservation.
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页码：2007 / 2010
页数：4
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