ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE

被引：15

作者：

KRIER, A ^{[1
]}

BISSITT, SA ^{[1
]}

MASON, NJ ^{[1
]}

NICHOLAS, RJ ^{[1
]}

SALESSE, A ^{[1
]}

WALKER, PJ ^{[1
]}

机构：

[1] UNIV OXFORD,CLARENDON LAB,OXFORD OX1 3PU,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 01期

关键词：

D O I：

10.1088/0268-1242/9/1/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the observation of electroluminescence from single quantum wells of GaSb/InxGa1-xSb, which covers the region from 1.8 to 2.12 Ccm at room temperature. The structures are grown by MOVPE, and cover the range of well widths 25-200 Angstrom, with a typical In content of 20%. The emission wavelength is found to increase with increasing well width until the critical thickness is exceeded, after which the emission is found to move back closer to the bulk GaSb band edge emission. Emission is observed up to 130 degrees C, indicating the considerable potential of this materials system for applications such as gas sensing.

引用

页码：87 / 90

页数：4

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