OBSERVATION OF THE INTERFACIAL-FIELD-INDUCED WEAK ANTILOCALIZATION IN INAS QUANTUM STRUCTURES

被引：98
|
作者：
CHEN, GL
HAN, J
HUANG, TT
DATTA, S
JANES, DB
机构：
[1] School of Electrical Engineering, Purdue University, West Lafayette
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.47.4084
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied low-temperature magnetoconductance and observed weak antilocalization in an AlSb/InAs/AlSb quantum-well structure. The spin-orbital field deduced from the antilocalization data is found to be insensitive to photoinduced changes in the carrier density, suggesting that the interfacial-field-induced rather than the crystal-field-induced spin splitting is the predominant cause of the spin-orbital scattering. We also find a significant enhancement of spin-orbital scattering in ZnTe/InAs/AlSb structures which can be explained by the structural asymmetry, thereby confirming the dominant role of the interfacial field.
引用
收藏
页码：4084 / 4087
页数：4
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