OBSERVATION OF THE INTERFACIAL-FIELD-INDUCED WEAK ANTILOCALIZATION IN INAS QUANTUM STRUCTURES

被引：98
|
作者：
CHEN, GL
HAN, J
HUANG, TT
DATTA, S
JANES, DB
机构：
[1] School of Electrical Engineering, Purdue University, West Lafayette
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.47.4084
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied low-temperature magnetoconductance and observed weak antilocalization in an AlSb/InAs/AlSb quantum-well structure. The spin-orbital field deduced from the antilocalization data is found to be insensitive to photoinduced changes in the carrier density, suggesting that the interfacial-field-induced rather than the crystal-field-induced spin splitting is the predominant cause of the spin-orbital scattering. We also find a significant enhancement of spin-orbital scattering in ZnTe/InAs/AlSb structures which can be explained by the structural asymmetry, thereby confirming the dominant role of the interfacial field.
引用
收藏
页码：4084 / 4087
页数：4
相关论文
共 50 条
  • [1] Weak antilocalization in InAs quantum wires
    Wirthmann, A.
    Gui, Y. S.
    Zehnder, C.
    Heitmann, D.
    Hu, C. -M.
    Kettemann, S.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 34 (1-2): : 493 - 496
  • [2] Interaction-induced crossover between weak antilocalization and weak localization in a disordered InAs/GaSb double quantum well
    Sazgari, Vahid
    Sullivan, Gerard
    Kaya, Ismet I.
    PHYSICAL REVIEW B, 2020, 101 (15)
  • [3] Observation of Anomalous Planar Hall Effect Induced by One-Dimensional Weak Antilocalization
    Zhong, Jingyuan
    Yang, Ming
    Wang, Jianfeng
    Li, Yaqi
    Liu, Chen
    Mu, Dan
    Liu, Yundan
    Cheng, Ningyan
    Shi, Zhixiang
    Yang, Lexian
    Zhuang, Jincheng
    Du, Yi
    Hao, Weichang
    ACS NANO, 2024, 18 (05) : 4343 - 4351
  • [4] Weak antilocalization in a GaAs quantum well in the presence of a strong in-plane magnetic field
    Desrat, W.
    Maude, D. K.
    Wasilewski, Z. R.
    Airey, R.
    Hill, G.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 551 - +
  • [5] Evidence of weak strain field in InAs/GaAs submonolayer quantum dots
    Cantalice, T. F.
    Alzeidan, A.
    Jacobsen, G. M.
    Borrely, T.
    Teodoro, M. D.
    Quivy, A. A.
    MICRO AND NANOSTRUCTURES, 2022, 172
  • [6] Interfacial-Field-Induced Increase of the Structural Phase Transition Temperature in Organic-Inorganic Perovskite Crystals Coated with ZnO Nanoshell
    Zhao, Fenghuan
    Gao, Xian
    Fang, Xuan
    Glinka, Yuri D.
    Feng, Xiyuan
    He, Zhubing
    Wei, Zhipeng
    Chen, Rui
    ADVANCED MATERIALS INTERFACES, 2018, 5 (14):
  • [7] Coupling effect between InAs quantum dot and electric field-induced quantum dot
    Kim, JH
    Jung, JH
    Kwack, KD
    Kim, TW
    Park, YJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 : S585 - S588
  • [8] Electronic structures of InAs self-assembled quantum dots in an axial magnetic field
    Li, SS
    Xia, JB
    PHYSICAL REVIEW B, 1998, 58 (07): : 3561 - 3564
  • [9] On the binding energies of excitons in polar quantum well structures in a weak electric field
    Wu, YF
    Liang, XX
    Bajaj, KK
    CHINESE PHYSICS, 2005, 14 (11): : 2314 - 2319
  • [10] Interfacial patterns in magnetorheological fluids: Azimuthal field-induced structures
    Dias, Eduardo O.
    Lira, Sergio A.
    Miranda, Jose A.
    PHYSICAL REVIEW E, 2015, 92 (02):
12345