PHOTOLUMINESCENT THIN-FILM POROUS SILICON ON SAPPHIRE

被引：22

作者：

DUBBELDAY, WB ^{[1
]}

SZAFLARSKI, DM ^{[1
]}

SHIMABUKURO, RL ^{[1
]}

RUSSELL, SD ^{[1
]}

SAILOR, MJ ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT CHEM,LA JOLLA,CA 92093

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 14期

关键词：

D O I：

10.1063/1.109641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results from the chemical stain etch fabrication and analysis of thin-film photoluminescent porous silicon on sapphire substrates are presented. The transparent sapphire substrate allows the excitation and collection of the luminescence at either the front or back of the wafer. Morphological differences found using scanning electron microscopy between porous SOS and porous bulk silicon are attributed to preferential etching of threading dislocations. This is confirmed by an observed stress relaxation in the Raman spectra. Also, it is shown for the first time that photoluminescent porous silicon (n-type) can be produced by photoinitiation of the chemical stain etch.

引用

页码：1694 / 1696

页数：3

共 16 条

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