(INAS)1/(GAAS)4 SUPERLATTICE STRAINED QUANTUM-WELL LASER AT 980 NM

被引：5

作者：

CHAND, N

DUTTA, NK

CHU, SNG

LOPATA, J

机构：

[1] AT&T Bell Laboratories

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 22期

关键词：

SEMICONDUCTOR LASERS; LASERS; EPITAXY AND EPITAXIAL GROWTH;

D O I：

10.1049/el:19911244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first successful MBE growth of (InAs)1/(GaAS)4 short-period superlattice (SPS) strained quantum well lasers emitting at approximately 980 nm is reported. The SPS consists of six periods of one and four monolayers of InAs and GaAs, respectively. The measured threshold current density was approximately 100 A cm-2 for 0.96 mm long lasers. Devices have operated up to 170-degrees-C with a characteristic temperature T0 of 148 K. The (InAs)m/(GaAs)n superlattice is an ordered counterpart of the InGaAs random alloy, and provides an alternative method of fabricating high speed electronic and photonic devices.

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页码：2009 / 2011

页数：3

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