INTERFACE RECOMBINATION VELOCITY AND LIFETIME IN GAAS AND ALGAAS/GAAS STRUCTURES

被引：7

作者：

BORREGO, JM

GHANDHI, SK

机构：

[1] Center for Integrated Electronics, Electrical Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy

来源：

SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 06期

关键词：

D O I：

10.1016/0038-1101(90)90186-I

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a non-destructive microwave measurement technique, we have determined the interface-recombination velocity of n GaAs/n+ GaAs and n GaAs/n+ AlGaAs interfaces. It is found that the interface-recombination velocity is lower in silicon doped than in sulphur-doped interfaces. Model equations are given of the interface-recombination velocity in terms of the N to N+ doping ratio which can be used in computer simulations of GaAs devices using these types of interfaces. © 1990.

引用

页码：733 / 736

页数：4