INVESTIGATION OF KINETIC MECHANISM FOR THE ION-ASSISTED ETCHING OF SI IN CL2

被引：62

作者：

MCNEVIN, SC

BECKER, GE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583304

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：485 / 491

页数：7

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[1] SURFACE STUDIES OF AND A MASS BALANCE MODEL FOR AR+ ION-ASSISTED CL-2 ETCHING OF SI
BARKER, RA
MAYER, TM
PEARSON, WC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 37 - 42
[2] PLASMA-ETCHING - DISCUSSION OF MECHANISMS
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 391 - 403
[3] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[4] CHLORINE REACTIONS ON SI (111) SURFACE
FLORIO, JV
ROBERTSO.WD
[J]. SURFACE SCIENCE, 1969, 18 (02) : 398 - &
[5] EVALUATION OF SURFACE KINETIC DATA BY TRANSFORM ANALYSIS OF MODULATED MOLECULAR-BEAM MEASUREMENTS
FOXON, CT
BOUDRY, MR
JOYCE, BA
[J]. SURFACE SCIENCE, 1974, 44 (01) : 69 - 92
[6] ION-ENHANCED GAS-SURFACE CHEMISTRY - THE INFLUENCE OF THE MASS OF THE INCIDENT ION
GERLACHMEYER, U
COBURN, JW
KAY, E
[J]. SURFACE SCIENCE, 1981, 103 (01) : 177 - 188
[7] ION ENHANCED GAS-SURFACE REACTIONS - A KINETIC-MODEL FOR THE ETCHING MECHANISM
GERLACHMEYER, U
[J]. SURFACE SCIENCE, 1981, 103 (2-3) : 524 - 534
[8] CHEMICAL RELAXATION MOLECULAR BEAM STUDIES OF REACTIVE GAS-SOLID SCATTERING .1. REACTION OF SILICON AND GERMANIUM WITH MOLECULAR CHLORINE
MADIX, RJ
SCHWARZ, JA
[J]. SURFACE SCIENCE, 1971, 24 (01) : 264 - &
[9] INVESTIGATION OF PLASMA-ETCHING MECHANISMS USING BEAMS OF REACTIVE GAS IONS
MAYER, TM
BARKER, RA
WHITMAN, LJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 349 - 352
[10] CF4/SILICON SURFACE-REACTIONS - EVIDENCE FOR PARALLEL ETCHING MECHANISMS FROM MODULATED ION-BEAM STUDIES
MCNEVIN, SC
BECKER, GE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 27 - 33