IMPROVED THRESHOLD VOLTAGE UNIFORMITY IN GAAS-MESFET USING HIGH-PURITY MOCVD-GROWN BUFFER LAYER AS A SUBSTRATE FOR ION-IMPLANTATION

被引:8
作者
SANO, Y
NAKAMURA, H
AKIYAMA, M
EGAWA, T
ISHIDA, T
KAMINISHI, K
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 05期
关键词
D O I
10.1143/JJAP.23.L290
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L290 / L292
页数:3
相关论文
共 3 条
[1]   DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].
MIYAZAWA, S ;
ISHII, Y ;
ISHIDA, S ;
NANISHI, Y .
APPLIED PHYSICS LETTERS, 1983, 43 (09) :853-855
[2]  
NAKAMURA H, 1983, ISSCC DIG TECH PAP I, V26, P134
[3]  
Yokoyama N., 1984, 1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, P44