THE EVOLUTION OF POWER DEVICE TECHNOLOGY

被引：58
作者：
ADLER, MS
OWYANG, KW
BALIGA, BJ
KOKOSA, RA
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 11期
关键词：
D O I：
10.1109/T-ED.1984.21754
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1570 / 1591
页数：22
相关论文
共 70 条
[11]   HIGH-GAIN POWER SWITCHING USING FIELD CONTROLLED THYRISTORS [J].
BALIGA, J .
SOLID-STATE ELECTRONICS, 1982, 25 (05) :345-&
[12]   THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J].
BARDEEN, J ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1948, 74 (02) :230-231
[13]   PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J].
BARDEEN, J ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1949, 75 (08) :1208-1225
[14]  
Becke H. W., 1980, International Electron Devices Meeting. Technical Digest, P649
[15]   HIGH CURRENT-DENSITY BETA DIMINUTION [J].
CLARK, LE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) :661-+
[16]   CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J].
DAVIES, RL ;
GENTRY, FE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :313-+
[17]  
DEBRUYNE P, 1976, IEEE POWER ELECTRONI, P262
[18]   AVALANCHE BREAKDOWN IN HIGH-VOLTAGE D-MOS DEVICES [J].
DECLERCQ, MJ ;
PLUMMER, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (01) :1-4
[19]   SOME ASPECTS OF THE DESIGN OF POWER TRANSISTORS [J].
FLETCHER, NH .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (05) :551-559
[20]  
FUJII K, 1981, IEEE ISSCC NEW YORK, P46
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