PHOTOCONDUCTOR RECEIVER SENSITIVITY

被引:11
作者
FORREST, SR
机构
关键词
D O I
10.1109/EDL.1984.26017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:536 / 539
页数:4
相关论文
共 9 条
[2]  
Campbell J. C., 1983, International Electron Devices Meeting 1983. Technical Digest, P464
[3]  
CHEN CY, 1984, 7TH TOP M INT GUID W
[4]   SOLID-STATE PHOTODETECTION - COMPARISON BETWEEN PHOTODIODES + PHOTOCONDUCTORS [J].
DIDOMENICO, M ;
SVELTO, O .
PROCEEDINGS OF THE IEEE, 1964, 52 (02) :136-&
[5]   EXCESS-NOISE AND RECEIVER SENSITIVITY MEASUREMENTS OF IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODES [J].
FORREST, SR ;
WILLIAMS, GF ;
KIM, OK ;
SMITH, RG .
ELECTRONICS LETTERS, 1981, 17 (24) :917-919
[6]  
MARSH JH, 1981, I PHYS C SER, V56, P621
[7]  
Ohno H., 1980, International Electron Devices Meeting. Technical Digest, P434
[8]   EXPERIMENTAL COMPARISON OF A GERMANIUM AVALANCHE PHOTO-DIODE AND INGAAS PINFET RECEIVER FOR LONGER WAVELENGTH OPTICAL COMMUNICATION-SYSTEMS [J].
SMITH, DR ;
HOOPER, RC ;
SMYTH, PP ;
WAKE, D .
ELECTRONICS LETTERS, 1982, 18 (11) :453-454
[9]  
SMITH RG, 1979, SEMICONDUCTOR DEVICE