GAAS LASERS WITH CONSISTENTLY LOW DEGRADATION RATES AT ROOM-TEMPERATURE

被引：17

作者：

GOODWIN, AR ^{[1
]}

PETERS, JR ^{[1
]}

PION, M ^{[1
]}

BOURNE, WO ^{[1
]}

机构：

[1] STAND TELECOMMUN LABS LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 02期

关键词：

D O I：

10.1063/1.89308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：110 / 113

页数：4

共 6 条

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DIXON, RW .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :239-242

[3] STATISTICAL CHARACTERIZATION OF LIFETIMES OF CONTINUOUSLY OPERATED (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J].

JOYCE, WB ;

DIXON, RW ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :684-686

[4] CONTINUOUS OPERATION OVER 10000-H OF GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASER WITHOUT LATTICE MISMATCH COMPENSATION [J].

KAN, H ;

NAMIZAKI, H ;

ISHII, M ;

ITO, A .

APPLIED PHYSICS LETTERS, 1975, 27 (03) :138-139

[5]

KRESSEL H, 1975, 1975 IEEE INT EL DEV, P447

[6] OBSERVATION OF RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS [J].

LANG, DV ;

KIMERLING, LC .

PHYSICAL REVIEW LETTERS, 1974, 33 (08) :489-492

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