ANGULAR DISTRIBUTION OF RADIATION FROM GAAS INJECTION LASERS

被引：16

作者：

ANTONOFF, MM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 12期

关键词：

D O I：

10.1063/1.1713289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3623 / &

共 10 条

[1]

ANTONOFF MM, 1964, B AM PHYS SOC, V9, P269

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[3]

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OLECHNA, DJ .

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[5] DIRECTIONALITY EFFECTS OF GAAS LIGHT-EMITTING DIODES .2. [J].

LAFF, RA ;

DUMKE, WP ;

DILL, FH ;

BURNS, G .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :63-65

[6] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J].

LASHER, GJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :58-61

[7] THEORY OF SEMICONDUCTOR MASER OF GAAS [J].

MCWHORTER, AL ;

ZEIGER, HJ ;

LAX, B .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :235-&

[8]

MICHEL AE, 1963, OPTICAL MASERS, P471

[9] A RELATION BETWEEN CURRENT DENSITY AT THRESHOLD AND LENGTH OF FABRY-PEROT TYPE GAAS LASERS [J].

PILKUHN, M ;

RUPPRECHT, H .

PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1243-&

[10] DIELECTRIC-WAVEGUIDE MODE OF LIGHT PROPAGATION IN P-N JUNCTIONS [J].

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LEITE, RCC .

APPLIED PHYSICS LETTERS, 1963, 2 (03) :55-57

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