CHARACTERIZATION OF THERMALLY NITRIDED SILICON DIOXIDE

被引：14

作者：

AMANO, J ^{[1
]}

EKSTEDT, T ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,INTEGRATED CIRCUIT LAB,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 09期

关键词：

D O I：

10.1063/1.93698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：816 / 818

页数：3

共 14 条

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[7] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS [J].

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :404-415

[8] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) :2053-2057

[9] EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) :184-188

[10] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :498-502

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