PHYSICAL AND DIELECTRIC PROPERTIES OF THE METAL-SILICON DIOXIDE-SILICON SYSTEM

被引：19

作者：

SPRAGUE, JL

MINAHAN, JA

WIED, OJ

机构：

来源：

关键词：

D O I：

10.1149/1.2425364

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：94 / 98

页数：5

共 10 条

[1] BROWN WL, 1956, SEMICONDUCTOR SURFAC, P111
[2] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES
GARRETT, CGB
BRATTAIN, WH
[J]. PHYSICAL REVIEW, 1955, 99 (02): : 376 - 387
[3] SURFACE PROPERTIES OF VACUUM CLEANED SILICON
LAW, JT
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 : 9 - 21
[4] LEHOVEC K, 1961, 21ST ANN C PHYS EL, P80
[5] MOLL JL, 1959, IRE WESCON CONV RE 3, P32
[6] PFANN WG, 1959, P IRE, V47, P2011
[7] SPRAGUE JA, UNPUB
[8] FILM STRIPPING TECHNIQUE FOR MAKING THIN SILICA WINDOWS
TANNENBAUM, E
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) : 940 - 940
[9] THE POTENTIAL OF SEMICONDUCTOR DIODES IN HIGH-FREQUENCY COMMUNICATIONS
UHLIR, A
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1099 - 1115
[10] VONHIPPEL AR, 1954, DIELECTRIC MATERIALS