A LOW-POWER AND HIGH-SPEED SUB-MICRON BURIED-CHANNEL MOSFET FABRICATED ON THE BURIED OXIDE

被引：9
|
作者：
OMURA, Y
SANO, E
OHWADA, K
HIRATA, K
SAKAKIBARA, Y
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 08期
关键词：
D O I：
10.1109/T-ED.1982.20876
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1331 / 1332
页数：2
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