AN EFFICIENT VOLUME-REMOVAL ALGORITHM FOR PRACTICAL 3-DIMENSIONAL LITHOGRAPHY SIMULATION WITH EXPERIMENTAL-VERIFICATION

被引：28

作者：

SCHECKLER, EW ^{[1
]}

TAM, NN ^{[1
]}

PFAU, AK ^{[1
]}

NEUREUTHER, AR ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1993年 / 12卷 / 09期

关键词：

D O I：

10.1109/43.240082

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A fast three-dimensional volume removal algorithm for resist dissolution is presented and verified with applications to optical lithography with phase-shift masks, resist silylation, and electron-beam lithography. Memory requirements are reduced by dynamically allocating complete topography and material information only at surface cells, and setting other cells as either bulk material or developer. The dissolution algorithm uses a fixed time step and stores the volume of material remaining in the surface cells. A simple redistribution scheme is used if more volume would be removed from a cell in one time step than is currently present. The compactness and speed of the algorithm make it suitable for use on engineering workstations. Simulations requiring 100 x 100 x 100 cells cad be performed in a few minutes. Defocus effects in phase-shift mask lithography and shot-size error in e-beam lithography are compared with experiment. A dry-etch resist silylation process is also investigated.

引用

页码：1345 / 1356

页数：12

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