CHARACTERIZATION OF SEMI-INSULATING GAAS SUBSTRATES FOR GAAS ICS

被引：0
作者：
NANISHI, Y
ISHIDA, S
MIYAZAWA, S
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, DIV FUNCT DEVICE DEV, ATSUGI, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LABS, DIV FUNCT DEVICE DEV, DEVICE MAT SECT, ATSUGI, JAPAN
来源：
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES | 1985年 / 33卷 / 01期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：136 / 145
页数：10
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共 13 条
[1]   INVESTIGATION OF INHOMOGENEITIES IN GAAS BY ELECTRON-BEAM EXCITATION [J].
CASEY, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :153-+
[2]   GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].
FAIRMAN, RD ;
CHEN, RT ;
OLIVER, JR ;
CHEN, DR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :135-140
[3]   PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J].
HEINKE, W ;
QUEISSER, HJ .
PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1082-1084
[4]   HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].
HOBGOOD, HM ;
ELDRIDGE, GW ;
BARRETT, DL ;
THOMAS, RN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :140-149
[5]   A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].
JORDAN, AS ;
CARUSO, R ;
VONNEIDA, AR .
BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637
[6]   ONE-DIMENSIONAL PHOTO-LUMINESCENCE DISTRIBUTION IN SEMI-INSULATING GAAS GROWN BY CZ AND HB METHODS [J].
KITAHARA, K ;
NAKAI, K ;
SHIBATOMI, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :880-883
[7]   INHOMOGENEITY IN SEMI-INSULATING GAAS REVEALED BY SCANNING LEAKAGE CURRENT MEASUREMENTS [J].
MATSUMOTO, Y ;
WATANABE, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L515-L517
[8]   STRIATION ETCHING OF UNDOPED, SEMI-INSULATING LEC-GROWN GAAS [J].
MIYAZAWA, S .
JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :459-461
[9]   LEAKAGE CURRENT IL VARIATION CORRELATED WITH DISLOCATION DENSITY IN UNDOPED, SEMI-INSULATING LEC-GAAS [J].
MIYAZAWA, S ;
MIZUTANI, T ;
YAMAZAKI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L542-L544
[10]   IMPURITY DISTRIBUTION IN SINGLE CRYSTALS .3. IMPURITY HETEROGENEITIES IN SINGLE CRYSTALS ROTATED DURING PULLING FROM MELT [J].
MORIZANE, K ;
WITT, A ;
GATOS, HC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :738-&
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