ELECTRONIC STATES OF OXYGEN IN GALLIUM-PHOSPHIDE

被引:8
|
作者
MORGAN, TN
机构
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 10期
关键词
D O I
10.1103/PhysRevB.29.5667
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5667 / 5678
页数:12
相关论文
共 50 条
  • [31] BEHAVIOR OF GERMANIUM IN GALLIUM-PHOSPHIDE
    IVASHCHE.AI
    SAMORUKO.BE
    SLOBODCH.SV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (02): : 199 - 201
  • [32] ZINC IMPLANTATION IN GALLIUM-PHOSPHIDE
    OHNUKI, Y
    INADA, T
    NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 647 - 654
  • [33] SCATTERING MECHANISMS IN GALLIUM-PHOSPHIDE
    BARANSKII, PI
    BELYAEV, AE
    GORODNICHII, OP
    SYTILINA, NG
    TOMCHUK, PM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 288 - 291
  • [34] CHEMISORPTION ON GALLIUM-PHOSPHIDE SURFACES
    VANVELZE.WJ
    MORGAN, AE
    SURFACE SCIENCE, 1973, 39 (01) : 255 - 259
  • [35] RECOMBINATION RADIATION OF AN EXCITON BOUND TO A ZINC OXYGEN COMPLEX IN GALLIUM-PHOSPHIDE
    KASATKIN, VA
    KESAMANLY, FP
    ROMANOV, VN
    SAMORUKOV, BE
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 81 - 82
  • [36] NATURE OF A DEEP DONOR CENTER IN OXYGEN-DOPED GALLIUM-PHOSPHIDE
    ILIN, NP
    MASTEROV, VF
    SAMORUKOV, BE
    SHTELMAKH, KF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 940 - 942
  • [37] LOCAL VIBRATIONS OF BERYLLIUM IN GALLIUM-PHOSPHIDE
    BERNDT, V
    KOPYLOV, AA
    PIKHTIN, AN
    FIZIKA TVERDOGO TELA, 1975, 17 (09): : 2812 - 2814
  • [38] ZONE EDGE PHONONS IN GALLIUM-PHOSPHIDE
    PODOR, B
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 120 (01): : 207 - 213
  • [39] INTENSE PHOTOLUMINESCENCE IN POROUS GALLIUM-PHOSPHIDE
    BELOGOROKHOV, AI
    KARAVANSKII, VA
    OBRAZTSOV, AN
    TIMOSHENKO, VY
    JETP LETTERS, 1994, 60 (04) : 274 - 279
  • [40] CONDUCTIVITY RELAXATION IN THE IRRADIATED GALLIUM-PHOSPHIDE
    LITOVCHENKO, PG
    MAKARENKO, VG
    OPILAT, VY
    TARTACHNIK, VP
    TYCHINA, II
    UKRAINSKII FIZICHESKII ZHURNAL, 1988, 33 (03): : 387 - 390