ELECTRONIC STATES OF OXYGEN IN GALLIUM-PHOSPHIDE

被引：8

作者：

MORGAN, TN

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.29.5667

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5667 / 5678

页数：12

共 50 条

[1] THE ELECTRONIC STATES OF OXYGEN IN GALLIUM-PHOSPHIDE
MORGAN, TN
PHYSICA B & C, 1983, 117 (MAR): : 146 - 148
[2] ELECTRONIC STATES OF OXYGEN IN GALLIUM-PHOSPHIDE, AN EXAMPLE OF WEAK BONDING
MORGAN, TN
PHYSICAL REVIEW LETTERS, 1982, 49 (02) : 173 - 176
[3] THE ELECTRONIC STATES OF OXYGEN IN GALLIUM-PHOSPHIDE - AN EXAMPLE OF WEAK BONDING
MORGAN, TN
PHYSICA B & C, 1983, 116 (1-3): : 131 - 136
[4] ELECTRONIC-STRUCTURE OF OXYGEN IN GALLIUM-PHOSPHIDE
JAROS, M
DEAN, PJ
PHYSICAL REVIEW B, 1983, 28 (10): : 6104 - 6106
[5] ELECTRONIC-STRUCTURE OF OXYGEN IN GALLIUM-PHOSPHIDE - REPLY
MORGAN, TN
PHYSICAL REVIEW B, 1983, 28 (10): : 6107 - 6109
[6] MULTICHARGED STATE OF OXYGEN IN GALLIUM-PHOSPHIDE
IVASHCHENKO, AI
IKIZLI, MN
SAMORUKOV, BE
SLOBODCHIKOV, SV
SOLOMONOV, AI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (01): : 49 - 51
[7] SURFACE-STATES ON GALLIUM-PHOSPHIDE
NORMAN, D
MCGOVERN, IT
NORRIS, C
PHYSICS LETTERS A, 1977, 63 (03) : 384 - 386
[8] ELECTRONIC STATES OF OXYGEN IN GALLIUM PHOSPHIDE.
Morgan, T.N.
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 146 - 148
[9] ON THE GROWTH OF GALLIUM-PHOSPHIDE LAYERS ON GALLIUM-PHOSPHIDE SUBSTRATES BY MOVPE
LEYS, MR
PISTOL, ME
TITZE, H
SAMUELSON, L
JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (01) : 25 - 31
[10] OXYGEN IN GALLIUM-PHOSPHIDE - A CANONICAL DEEP DONOR
DEAN, PJ
PHYSICA B & C, 1983, 117 (MAR): : 140 - 145