RELAXATION INDUCED CHANGES IN ELECTRICAL BEHAVIOR OF GLASSY CHALCOGENIDE SEMICONDUCTORS

被引:142
作者
ABKOWITZ, M
机构
关键词
D O I
10.1002/pen.760241412
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
引用
收藏
页码:1149 / 1154
页数:6
相关论文
共 20 条
[1]   BEHAVIOR OF THE DRIFT MOBILITY IN THE GLASS-TRANSITION REGION OF SOME HOLE-TRANSPORTING AMORPHOUS ORGANIC FILMS [J].
ABKOWITZ, M ;
STOLKA, M ;
MORGAN, M .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3453-3457
[2]   CHEMICAL MODIFICATION OF THE ELECTRICAL BEHAVIOR OF A-SE AND ITS ALLOYS - XEROGRAPHIC STUDIES [J].
ABKOWITZ, M ;
JANSEN, F .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :953-956
[3]   XEROGRAPHIC SPECTROSCOPY OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS [J].
ABKOWITZ, M ;
ENCK, RC .
PHYSICAL REVIEW B, 1982, 25 (04) :2567-2577
[4]   PHOTOELECTRONIC BEHAVIOR OF A-SE AND SOME A-SE - AS ALLOYS IN THEIR GLASS-TRANSITION REGIONS [J].
ABKOWITZ, M ;
PAI, DM .
PHYSICAL REVIEW B, 1978, 18 (04) :1741-1750
[5]   CHANGES IN CAPACITANCE OF AMORPHOUS SE-AS ALLOY-FILMS DURING STRUCTURAL RELAXATION BELOW THE GLASS-TRANSITION TEMPERATURE [J].
ABKOWITZ, M ;
POCHAN, DF ;
POCHAN, JM .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4173-4179
[6]  
ABKOWITZ M, UNPUB PHIL MAG LETT
[7]  
ABKOWITZ M, 1983, B AM PHYS SOC, V28, P276
[8]  
DOLEZALEK FK, 1976, PHOTOCONDUCTIVITY RE, P71
[9]   DRIFT MOBILITIES OF ELECTRONS AND HOLES AND SPACE-CHARGE-LIMITED CURRENTS IN AMORPHOUS SELENIUM FILMS [J].
HARTKE, JL .
PHYSICAL REVIEW, 1962, 125 (04) :1177-&
[10]   VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M ;
ADLER, D ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507