MECHANISMS FOR CRYSTALLOGRAPHIC ORIENTATION IN THE CRYSTALLIZATION OF THIN SILICON FILMS FROM THE MELT

被引：20

作者：

ATWATER, HA ^{[1
]}

THOMPSON, CV ^{[1
]}

SMITH, HI ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF MATERIALS RESEARCH | 1988年 / 3卷 / 06期

关键词：

D O I：

10.1557/JMR.1988.1232

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1232 / 1237

页数：6

共 21 条

[1]

Atwater H. A., 1984, Materials Letters, V2, P269, DOI 10.1016/0167-577X(84)90128-9

[2] ORIENTATION FILTERING BY GROWTH-VELOCITY COMPETITION IN ZONE-MELTING RECRYSTALLIZATION OF SILICON ON SIO2 [J].

ATWATER, HA ;

THOMPSON, CV ;

SMITH, HI ;

GEIS, MW .

APPLIED PHYSICS LETTERS, 1983, 43 (12) :1126-1128

[3] AN ETCH PIT TECHNIQUE FOR ANALYZING CRYSTALLOGRAPHIC ORIENTATION IN SI FILMS [J].

BEZJIAN, KA ;

SMITH, HI ;

CARTER, JM ;

GEIS, MW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1848-1850

[4]

Frenkel J., 1932, PHYS Z SOWJETUNION, V1, P498

[5] SOLIDIFICATION-FRONT MODULATION TO ENTRAIN SUBBOUNDARIES IN ZONE-MELTING RECRYSTALLIZATION OF SI ON SIO2 [J].

GEIS, MW ;

SMITH, HI ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

THOMPSON, CV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) :1178-1183

[6] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

MABY, EW ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :158-160

[7] CHARACTERIZATION AND ENTRAINMENT OF SUBBOUNDARIES AND DEFECT TRAILS IN ZONE-MELTING-RECRYSTALLIZED SI FILMS [J].

GEIS, MW ;

SMITH, HI ;

CHEN, CK .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1152-1160

[8] ZONE-MELTING RECRYSTALLIZATION OF SI FILMS WITH A MOVEABLE-STRIP-HEATER OVEN [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2812-2818

[9]

HAOND M, 1985, ENERGY BEAM SOLID IN, P417

[10] ORIGIN OF LAMELLAE IN RADIATIVELY MELTED SILICON FILMS [J].

HAWKINS, WG ;

BIEGELSEN, DK .

APPLIED PHYSICS LETTERS, 1983, 42 (04) :358-360

← 1 2 3 →