MECHANISMS FOR CRYSTALLOGRAPHIC ORIENTATION IN THE CRYSTALLIZATION OF THIN SILICON FILMS FROM THE MELT

被引：20

作者：

ATWATER, HA ^{[1
]}

THOMPSON, CV ^{[1
]}

SMITH, HI ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

JOURNAL OF MATERIALS RESEARCH | 1988年 / 3卷 / 06期

关键词：

D O I：

10.1557/JMR.1988.1232

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1232 / 1237

页数：6

共 21 条

[1] Atwater H. A., 1984, Materials Letters, V2, P269, DOI 10.1016/0167-577X(84)90128-9
[2] ORIENTATION FILTERING BY GROWTH-VELOCITY COMPETITION IN ZONE-MELTING RECRYSTALLIZATION OF SILICON ON SIO2
ATWATER, HA
THOMPSON, CV
SMITH, HI
GEIS, MW
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1126 - 1128
[3] AN ETCH PIT TECHNIQUE FOR ANALYZING CRYSTALLOGRAPHIC ORIENTATION IN SI FILMS
BEZJIAN, KA
SMITH, HI
CARTER, JM
GEIS, MW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1848 - 1850
[4] Frenkel J., 1932, PHYS Z SOWJETUNION, V1, P498
[5] SOLIDIFICATION-FRONT MODULATION TO ENTRAIN SUBBOUNDARIES IN ZONE-MELTING RECRYSTALLIZATION OF SI ON SIO2
GEIS, MW
SMITH, HI
SILVERSMITH, DJ
MOUNTAIN, RW
THOMPSON, CV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1178 - 1183
[6] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY
GEIS, MW
SMITH, HI
TSAUR, BY
FAN, JCC
MABY, EW
ANTONIADIS, DA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 158 - 160
[7] CHARACTERIZATION AND ENTRAINMENT OF SUBBOUNDARIES AND DEFECT TRAILS IN ZONE-MELTING-RECRYSTALLIZED SI FILMS
GEIS, MW
SMITH, HI
CHEN, CK
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) : 1152 - 1160
[8] ZONE-MELTING RECRYSTALLIZATION OF SI FILMS WITH A MOVEABLE-STRIP-HEATER OVEN
GEIS, MW
SMITH, HI
TSAUR, BY
FAN, JCC
SILVERSMITH, DJ
MOUNTAIN, RW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2812 - 2818
[9] HAOND M, 1985, ENERGY BEAM SOLID IN, P417
[10] ORIGIN OF LAMELLAE IN RADIATIVELY MELTED SILICON FILMS
HAWKINS, WG
BIEGELSEN, DK
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 358 - 360

← 1 2 3 →