HIGHLY CONTROLLED DIFFUSION OF ION-IMPLANTED ARSENIC BY MULTIPLE SCAN ELECTRON-BEAM HEATING

被引:0
作者
GODFREY, DJ
MCMAHON, RA
AHMED, H
DOWSETT, M
机构
[1] UNIV CAMBRIDGE,MICROCIRCUIT ENGN LAB,CAMBRIDGE,ENGLAND
[2] CITY LONDON POLYTECH,DEPT PHYS,LONDON EC3N 2EY,ENGLAND
来源
JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期
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D O I
10.1051/jphyscol:1983536
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页码:229 / 233
页数:5
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GODFREY DJ, 1982, 1ST INT S VLSI ECS M
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