A SUB-THRESHOLD AND NEAR-THRESHOLD CURRENT MODEL FOR SILICON MESFETS

被引：12

作者：

MARSHALL, JD

MEINDL, JD

机构：

[1] Stanford Univ, CA, USA, Stanford Univ, CA, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 03期

关键词：

SEMICONDUCTING SILICON - SEMICONDUCTOR DEVICES; FIELD EFFECT - Mathematical Models;

D O I：

10.1109/16.2467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model for silicon MESFETs that predicts static current-voltage characteristics continuously from subthreshold through above-threshold operation has been developed. The model is based on an expression for the channel charge density derived from an analytical solution of Poisson's equation in one dimension including mobile electrons and holes. The closed-form current model is verified with measured data in all regimes of operation.

引用

页码：388 / 390

页数：3

共 9 条

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