OVAL DEFECTS IN GA1-XALXAS MOLECULAR-BEAM EPITAXY LAYERS - A RAMAN-SCATTERING AND PHOTOLUMINESCENCE COMBINED STUDY

被引：15
作者：
SAPRIEL, J
CHAVIGNON, J
ALEXANDRE, F
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 23期
关键词：
D O I：
10.1063/1.99593
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1970 / 1972
页数：3
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共 11 条
[1]   RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS [J].
ABSTREITER, G ;
BAUSER, E ;
FISCHER, A ;
PLOOG, K .
APPLIED PHYSICS, 1978, 16 (04) :345-352
[2]   OPTICAL-PROPERTIES OF ALXGA1-XAS [J].
ASPNES, DE ;
KELSO, SM ;
LOGAN, RA ;
BHAT, R .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767
[3]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[4]  
BRODSKY MH, 1983, LIGHT SCATTERING SOL, V1, P205
[5]   CLASSIFICATION AND ORIGINS OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FUJIWARA, K ;
KANAMOTO, K ;
OHTA, YN ;
TOKUDA, Y ;
NAKAYAMA, T .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :104-112
[6]  
Hayes W., 1978, SCATTERING LIGHT CRY
[7]   RAMAN INVESTIGATION OF ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN GA1-XALXAS EPITAXIAL LAYERS [J].
JUSSERAND, B ;
SAPRIEL, J .
PHYSICAL REVIEW B, 1981, 24 (12) :7194-7205
[8]  
MADELUNG O, 1982, LANDOLTBORNSTEIN, V17
[9]   MICROPROBE RAMAN ANALYSIS OF PICOSECOND LASER ANNEALED IMPLANTED SILICON [J].
NISSIM, YI ;
SAPRIEL, J ;
OUDAR, JL .
APPLIED PHYSICS LETTERS, 1983, 42 (06) :504-506
[10]   CHARACTERIZATION OF OVAL DEFECTS IN MOLECULAR-BEAM EPITAXY GA0.7AL0.3AS LAYERS BY SPATIALLY RESOLVED CATHODOLUMINESCENCE [J].
PAPADOPOULO, AC ;
ALEXANDRE, F ;
BRESSE, JF .
APPLIED PHYSICS LETTERS, 1988, 52 (03) :224-226
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