SINGLE-CRYSTAL GROWTH FROM VAPOUR AND ETCH PIT STUDIES IN ARSENIC

被引：4

作者：

JEAVONS, AP

SAUNDERS, GA

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1968年 / 1卷 / 07期

关键词：

D O I：

10.1088/0022-3727/1/7/307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：869 / &

共 14 条

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