INJECTION ELECTROLUMINESCENCE IN METAL-SEMICONDUCTOR TUNNEL DIODES

被引：14

作者：

EASTMAN, PC

HAERING, RR

BARNES, PA

机构：

来源：

SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 12期

关键词：

D O I：

10.1016/0038-1101(64)90066-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：879 / &

共 16 条

[1]

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[3] SILICON CARBIDE DIODE LASER [J].

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ROSENBERG, AJ ;

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[4] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

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KINGSLEY, JD .

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[5] SILICON CARBIDE DIODE LASER [J].

HALL, RN .

PROCEEDINGS OF THE IEEE, 1964, 52 (01) :91-&

[6]

Henisch H.K., 1962, ELECTROLUMINESCENCE

[7] COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J].

HOLONYAK, N ;

BEVACQUA, SF .

APPLIED PHYSICS LETTERS, 1962, 1 (04) :82-83

[8] INJECTION ELECTROLUMINESCENCE IN CDS BY TUNNELING FILMS [J].

JAKLEVIC, RC ;

DONALD, DK ;

LAMBE, J ;

VASSELL, WC .

APPLIED PHYSICS LETTERS, 1963, 2 (01) :7-9

[9] MASER ACTION IN INAS DIODES [J].

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APPLIED PHYSICS LETTERS, 1963, 2 (09) :176-178

[10] SEMICONDUCTOR DIODE MASERS IN (INXGA1-X)AS [J].

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STRAUSS, AJ ;

REDIKER, RH .

PROCEEDINGS OF THE IEEE, 1963, 51 (08) :1154-&

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