ELECTRONIC-STRUCTURE OF K/SI(111) INTERFACES

被引：13

作者：

WEITERING, HH ^{[1
]}

CHEN, J ^{[1
]}

DINARDO, NJ ^{[1
]}

PLUMMER, EW ^{[1
]}

机构：

[1] DREXEL UNIV,DEPT PHYS & ATMOSPHER SCI,PHILADELPHIA,PA 19104

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.578408

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoemission studies of the K/Si(111)7 X 7 and K/Si(111) (square-root 3 X square-root 3)R30-degrees-B interfaces show that both interfaces are semiconducting at room temperature saturation coverage. At both types of interfaces, a dispersionless K-induced surface state is observed below the Fermi level. We argue that these interfaces are correlated systems. We provide conclusive evidence that the onset of metallization and long-range conductivity occurs during the development of the second and third layers at cryogenic temperatures.

引用

页码：2049 / 2053

页数：5

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