DIFFUSION OF METALS IN SILICON DIOXIDE

被引:465
|
作者
MCBRAYER, JD
SWANSON, RM
SIGMON, TW
机构
关键词
D O I
10.1149/1.2108827
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1242 / 1246
页数:5
相关论文
共 50 条
  • [41] BORON AND PHOSPHORUS DIFFUSION IN SILICON THROUGH A SILICON DIOXIDE LAYER - PROCESS MODEL AND DEVICE CHARACTERIZATION
    JAIN, RK
    SUAREZ, RE
    ACTA CIENTIFICA VENEZOLANA, 1977, 28 : 32 - 32
  • [42] PERFORMANCE OF TANTALUM-SILICON-NITRIDE DIFFUSION-BARRIERS BETWEEN COPPER AND SILICON DIOXIDE
    ANGYAL, MS
    SHACHAMDIAMAND, Y
    REID, JS
    NICOLET, MA
    APPLIED PHYSICS LETTERS, 1995, 67 (15) : 2152 - 2154
  • [43] Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier
    Barba, D.
    Wang, C.
    Nelis, A.
    Terwagne, G.
    Rosei, F.
    JOURNAL OF APPLIED PHYSICS, 2018, 123 (16)
  • [44] Tittanium dioxide film as a phosphorus diffusion barrier in silicon solar cells
    Ueranantasun, A
    Richards, BS
    Honsberg, CB
    Cotter, JE
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1411 - 1414
  • [45] CHARACTERIZATION OF CESIUM DIFFUSION IN SILICON DIOXIDE FILMS USING BACKSCATTERING SPECTROMETRY
    FISHBEIN, BJ
    PLUMMER, JD
    APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1200 - 1202
  • [46] Interactions of fluorine redistribution and nitrogen incorporation with boron diffusion in silicon dioxide
    Navi, M
    Dunham, S
    SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 1997, : 335 - 338
  • [47] ISOTOPIC STUDY OF OXYGEN DIFFUSION IN SILICON DIOXIDE THIN-FILMS
    GULINO, DA
    KREN, LA
    DEVER, TM
    THIN SOLID FILMS, 1990, 188 (02) : 237 - 246
  • [48] Diffusion of boron, phosphorus, arsenic, and antimony in thermally grown silicon dioxide
    Aoyama, T
    Tashiro, H
    Suzuki, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (05) : 1879 - 1883
  • [49] RADIATION-INDUCED CURRENT IN SILICON DIOXIDE CONSIDERING DIFFUSION CURRENTS
    GURTOV, VA
    RAIKERUS, PA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (02): : K199 - K200
  • [50] Excess oxygen limited diffusion and precipitation of iron in amorphous silicon dioxide
    Leveneur, J.
    Langlois, M.
    Kennedy, J.
    Metson, James B.
    JOURNAL OF APPLIED PHYSICS, 2017, 122 (13)