DIFFUSION OF METALS IN SILICON DIOXIDE

被引:468
作者
MCBRAYER, JD
SWANSON, RM
SIGMON, TW
机构
关键词
D O I
10.1149/1.2108827
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1242 / 1246
页数:5
相关论文
共 19 条
[1]  
Anderson O. L., 1954, J AM CERAM SOC, V37, P573, DOI [DOI 10.1111/J.1151-2916.1954.TB13991.X, 10.1111/j.1151-2916.1954.tb13991.x]
[2]  
BEADLE WE, 1985, QUICK REFERENCE MANU, P6
[3]   THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS [J].
BEYERS, R .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) :147-152
[4]   REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].
CHOW, TP ;
STECKL, AJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497
[5]  
Chu W.-K., 1978, BACKSCATTERING SPECT, P123
[6]  
DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]
[7]  
GRAY DE, 1972, AM I PHYSICS HDB
[8]  
GREAVES GN, 1978, PHYSICS SIO2 ITS INT, P268
[9]  
HONIG RE, 1969, RCA REV JUN
[10]  
Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714