DIFFUSION OF METALS IN SILICON DIOXIDE

[1] Anderson O. L., 1954, J AM CERAM SOC, V37, P573, DOI [DOI 10.1111/J.1151-2916.1954.TB13991.X, 10.1111/j.1151-2916.1954.tb13991.x]

[2] BEADLE WE, 1985, QUICK REFERENCE MANU, P6

[3] THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) : 147 - 152

[4] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[5] Chu W.-K., 1978, BACKSCATTERING SPECT, P123

[6] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[7] GRAY DE, 1972, AM I PHYSICS HDB

[8] GREAVES GN, 1978, PHYSICS SIO2 ITS INT, P268

[9] HONIG RE, 1969, RCA REV JUN

[10] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[1] Anderson O. L., 1954, J AM CERAM SOC, V37, P573, DOI [DOI 10.1111/J.1151-2916.1954.TB13991.X, 10.1111/j.1151-2916.1954.tb13991.x]

[2] BEADLE WE, 1985, QUICK REFERENCE MANU, P6

[3] THERMODYNAMIC CONSIDERATIONS IN REFRACTORY METAL-SILICON-OXYGEN SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (01) : 147 - 152

[4] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[5] Chu W.-K., 1978, BACKSCATTERING SPECT, P123

[6] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[7] GRAY DE, 1972, AM I PHYSICS HDB

[8] GREAVES GN, 1978, PHYSICS SIO2 ITS INT, P268

[9] HONIG RE, 1969, RCA REV JUN

[10] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714