NOVEL ORGANIC-ON-INP FIELD-EFFECT TRANSISTOR

被引：15

作者：

CHENG, CL

FORREST, SR

KAPLAN, ML

SCHMIDT, PH

TELL, B

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1217 / 1219

页数：3

共 20 条

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[5] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J].

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[6]

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[10]

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